收藏本站
ADP3419
to the MOSFET data sheets, Q HSGATE = 18.6 nC and
Q LSGATE = 68 nC. Given that f MAX is 300 kHz, P MAX would
be about 130 mW.
Part of this power consumption generates heat inside the
ADP3419. The temperature rise of the ADP3419 against its
environment is estimated as:
The total MOSFET drive power dissipates in the output
resistance of ADP3419 and in the MOSFET gate resistance
as well. η represents the ratio of power dissipation inside the
ADP3419 over the total MOSFET gate driving power. For
normal applications, a rough estimation for η is 0.7. A more
accurate estimation can be calculated using:
D T [ q JA
P MAX
h
(eq. 4)
where θ JA is ADP3419’s thermal resistance from junction
to air, given in the absolute maximum ratings as 220 ° C/W
for a 4 ? layer board.
h [
Q HSGATE
Q HSGATE ) Q LSGATE
0.5 R1
R1 ) R HSGATE ) R
)
0.5 R2
R2 ) R HSGATE
)
Q LSGATE
Q HSGATE ) Q LSGATE
0.5 R3
R3 ) R LSGATE
)
0.5 R4
R4 ) R LSGATE
(eq. 5)
where:
R1 and R2 are the output resistances of the high-side driver:
R1 = 1.7 (DRVH ? BST), R2 = 0.8 (DRVH ? SW).
R3 and R4 are the output resistances of the low-side driver:
R3 = 1.7 (DRVL ? VCC), R4 = 0.8 (DRVL ? GND).
R is the external resistor between the BST pin and the BST
capacitor.
R HSGATE and R LSGATE are gate resistances of high-side and
low-side MOSFETs, respectively.
Assuming that R = 0 and that R HSGATE = R LSGATE = 0.5,
Equation 5 gives a value of η = 0.71. Based on Equation 4,
the estimated temperature rise in this example is about 22 ° C.
PC Board Layout Considerations
Use the following general guidelines when designing
printed circuit boards. Figure 17 gives an example of the
typical land patterns based on the guidelines given here.
? The VCC bypass capacitor should be located as close as
possible to the VCC and GND pins. Place the
ADP3419 and bypass capacitor on the same layer of the
? It is best to have the low-side MOSFET gate close to
the DRVL pin; otherwise, use a short and very thick
PCB trace between the DRVL pin and the low-side
MOSFET gate.
? Fast switching of the high-side MOSFET can reduce
switching loss. However, EMI problems can arise due
to the severe ringing of the switch node voltage.
Depending on the character of the low-side MOSFET, a
very fast turn-on of the high-side MOSFET may falsely
turn on the low-side MOSFET through the dv/dt
coupling of its Miller capacitance. Therefore, when fast
turn-on of the high-side MOSFET is not required by the
application, a resistor of about 1 W to 2 W can be placed
between the BST pin and the BST capacitor to limit the
turn-on speed of the high-side MOSFET.
D1
board, so that the PCB trace between the ADP3419
VCC pin and the MLC capacitor does not contain any
R BST
C BST
via. An ideal location for the bypass MLC capacitor is
near Pin 5 and Pin 6 of the ADP3419.
? High frequency switching noise can be coupled into the
VCC pin of the ADP3419 via the BST diode.
Therefore, do not connect the anode of the BST diode
to the VCC pin with a short trace. Use a separate via or
trace to connect the anode of the BST diode directly to
the VCC 5.0 V power rail.
ORDERING INFORMATION
TO SWITCH
NODE
SHORT, THICK TRACE
TO THE GATES OF
LOW-SIDE MOSFETS
C VCC
Figure 17. External Component Placement Example
Device Number
ADP3419JRM ? REEL
ADP3419JRMZ ? REEL
ADP34190091RMZR
Branding
P9A
P9B
P9B
Package Type
10 ? Lead MSOP
10 ? Lead MSOP
10 ? Lead MSOP
Shipping ?
3000 Tape & Reel
3000 Tape & Reel
3000 Tape & Reel
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*The “Z’’ suffix indicates Pb ? Free part.
http://onsemi.com
9
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
ADP3611JRMZ-REEL IC MOSFET DRIVER DUAL 10-MSOP
ADP5501ACPZ-RL IC LED DRVR WHITE BCKLGT 24LFCSP
ADP8863ACPZ-R7 IC LED DRVR WHIT BCKLGT 20-WLCSP
ADUM1100UR IC DIGITAL ISOL/COUPLER 8SOIC
ADUM1201CR IC ISOLATOR DIGITAL DUAL 8SOIC
ADUM1210BRZ IC ISOLATOR DIGITAL DUAL 8SOIC
ADUM1233BRWZ-RL IC ISOLATR DGTL 2CH 0.1A 16-SOIC
ADUM1234BRWZ-RL IC ISOLATR DGTL 2CH 0.1A 16-SOIC
相关代理商/技术参数
ADP3419JRMZ 制造商:Analog Device 功能描述: 制造商:Analog Devices 功能描述:MOSFET Driver, Dual, 10 Pin, Plastic, TSSOP
ADP3419JRMZ-REEL 功能描述:功率驱动器IC DUAL SYNCHRONOUS DRV RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube
ADP3419JRMZ-REEL1 制造商:AD 制造商全称:Analog Devices 功能描述:Dual Bootstrapped, High Voltage MOSFET Driver with Output Disable
ADP34200002RUR 制造商:Rochester Electronics LLC 功能描述:- Bulk
ADP3421 制造商:AD 制造商全称:Analog Devices 功能描述:Geyserville-Enabled DC-DC Converter Controller for Mobile CPUs
ADP3421JRU 制造商:AD 制造商全称:Analog Devices 功能描述:Geyserville-Enabled DC-DC Converter Controller for Mobile CPUs
ADP3421JRU-REEL 制造商:Rochester Electronics LLC 功能描述: 制造商:Analog Devices 功能描述:
ADP3421JRU-REEL7 制造商:ON Semiconductor 功能描述: